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New Technique
for Making Nanoelectronic Devices
An
international team of researchers demonstrated
how control over materials on the nano scale can
be extended to create complex patterns important
in the production of nanoelectronics. Previously,
a research team from the University of Wisconsin-Madison
demonstrated a lithographic technique for creating
patterns in the chemistry of polymeric materials
used as templates for nanomanufacturing. They
deposited a film of block copolymers on a chemically
patterned surface such that the molecules arranged
themselves to replicate the underlying pattern
without imperfections.
That technique works well for creating templates
that are neatly ordered in periodic arrays. But,
according to the researchers, one of the challenges
of nanofabrication is integrating these self-assembling
materials into existing manufacturing strategies.
This new technique directs the assembly of blends
of block copolymers and homopolymers on chemically
nanopatterned substrates. The result is the creation
of structures with non-regular geometries. The
fine control over structure dimensions has, therefore,
been potentially harnessed, afforded by self-assembling
materials, to allow for the production of complex
nanoelectronic devices. That kind of control is
critical if computer architects are to continue
advancing by Moore's Law.
Current manufacturing processes employing chemically
amplified lithography techniques achieve dimensions
as small as 50 to 70 nm, but that technology might
not be extendable as feature dimensions shrink
below 30 nm.
By merging the latest principles of lithography
and self-assembly block-copolymer techniques,
researchers at UW-Madison and the Paul Scherrer
Institute in Switzerland developed a hybrid approach
that maximizes the benefits and minimizes the
limitations of each approach to nanomanufacturing.
Visit www.engr.wisc.edu/che

(A) Schematic of the directed self-assembly
process used to orient block copolymers. A thin
film (~45 nm) of block copolymer is deposited
on a patterned chemical surface and annealed such
that the block copolymer phase separates into
ordered domains. (B) The phase segregated block
copolymer forms disordered “fingerprint”
features on an unpatterned surface (left image)
and ordered features such as 45° and 135° bends on patterned chemical surfaces (middle and
right images).
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