BeSang, UAlbany Nanocollege Form Partnership on 3D Memory Development

After a worldwide search designed to further its development of high-density, 3D-memory technology, a fabless start-up nanoelectronics company based in Portland, OR has selected the College of Nanoscale Science and Engineering (“CNSE”) of the University at Albany to launch a joint research and development partnership.

As part of a three-year program valued at $1.1 million, BeSang Inc. will use tools and facilities at CNSE’s Albany NanoTech complex to enhance its innovative 3D technology, which aims to develop an innovative, simpler, and more cost-effective way to enhance the memory core on logic or periphery logic circuitry in emerging nanochips.

BeSang looked at several locations throughout the world before deciding on the UAlbany NanoCollege. The company will initially locate two scientists at Albany NanoTech – both of whom arrived last week – with the possibility of expanding its on-site presence in the future.

“It is an exceptional opportunity for BeSang to work with the College of Nanoscale Science and Engineering. Through access to the state-of-the-art facilities at Albany NanoTech, we will be able to develop our 3D technology more quickly, which will allow us to speed up its introduction in the marketplace,” said Sang-Yun Lee, CEO of BeSang. “We also hope to attract other nanoelectronics companies to participate in this development program, and we expect to draw more engineers and funding in the future as the partnership grows.”

“This new partnership with BeSang is yet another strong indication that the nanotechnology strategy articulated and supported by Governor Pataki, Speaker Silver and Senator Bruno is making New York a global destination for next-generation, high-technology companies,” said Dr. Alain E. Kaloyeros, vice president and chief administrative officer of CNSE and president of Albany NanoTech. “It also demonstrates the world-class technical capability of CNSE’s Albany NanoTech complex, which is attracting companies both large and small that are working on the development and commercialization of innovative technology. We welcome BeSang to our ever-expanding list of partners and are delighted with its presence on our site.”

“BeSang’s 3D technology has great potential for developing high-density memories and high-quality image sensors at low cost, and we look forward to working with the company to further develop their technology at Albany NanoTech,” said James Ryan, professor of nanoscience at CNSE and vice president of technology at Albany NanoTech, who will serve as an adviser to BeSang.

The technology developed by BeSang will allow a memory core to be stacked on top of logic or periphery logic circuitry in a semiconductor chip. While conventional 3D chip technologies are merely package-level stacking technologies, which are good for limited mobile applications, BeSang’s 3D technology stacks multi-layer devices within a single chip, using seamless and unlimited interconnections between the device layers. As a result, this single-chip, high-density 3D technology provides a low-cost, high-speed vertical memory solution for the semiconductor industry.

Visit http://cnse.albany.edu and www.BeSang.com.